Effects of hydrogen during molecular beam epitaxy of GaN

Effects of hydrogen on the morphology and electrical properties of GaN grown by plasma-assisted molecular-beam epitaxy

We study the effect of introducing hydrogen gas through the RF-plasma source during plasma-assisted molecular-beam epitaxy of GaN(0001). The well-known smooth-torough transition that occurs for this surface as a function of decreasing Ga flux in the absence of H is found to persist even with H present, although the critical Ga flux for this transition increases. Under Ga-rich conditions, the pr...

Structural Properties of GaN Films Grown by Molecular Beam Epitaxy on Singular and Vicinal 6H-SiC(0001)

Gallium nitride films are grown by plasma-assisted molecular beam epitaxy (MBE) on 6HSiC(0001) substrates with no miscut and with 3.5° miscuts in both the [1 1 00] and [11 2 0] directions. The hydrogen-etched substrates display straight or chevron shaped steps, respectively, and the same morphology is observed on the GaN films. X-ray rocking curves display substantially reduced width for films ...

Magnesium incorporation in GaN grown by molecular-beam epitaxy

A pronounced dependence of Mg incorporation on surface polarity was observed in a series of Mg step-doped epitaxial GaN layers grown by rf-plasma-assisted molecular-beam epitaxy. Incorporation was studied for both ~0001!, or Ga-polarity and (0001̄) or N-polarity orientations. Up to a factor of 30 times more Mg was incorporated in Ga-polarity layers under certain conditions, as determined by seco...

Title Growth mode and strain evolution during InN growth on GaN(0001) by molecular-beam epitaxy

Surface Morphology of GaN Surfaces during Molecular Beam Epitaxy

The reconstruction and surface morphology of gallium nitride (0001) and (000 ) surfaces are studied using scanning probe microscopy and reflection high-energy electron diffraction. Results for bare GaN surfaces are summarized, and changes in the surface structure and morphology due to co-deposition of indium or magnesium during growth are discussed.